The OPB706A consists of an infrared Light Emitting Diode (LED) and an NPN silicon Phototransistor mounted “side-by-side” on parallel axes in a black plastic housing. The Phototransistor / Photodarlington responds to light from the emitter when a reflective object passes within its field of view of the device.
Features
Reflection distance: 0.05” (1.27mm)
Power dissipation: 75mW
Voltage collector-emitter: 24V
Emitter-collector voltage: 5V
DC forward current: 50mA
Pin 1 Collector
Pin 2 Emitter
Pin 3 Anode
Pin 4 Cathode
Soldering: RMA flux is recommended.
WARNING
