This is a 1024-word by 4-bit static RAM fabricated with the silicon-gate CMOS process and designed for low power dissipation and easy application of battery back-up.
Features:
• Low power dissipation in the standby mode: 15J1A(max)
• Single 5V power supply
• Data holding at 2V supply voltage 300 ns (max) 450 ns (max)
• No external clock or refreshing operation required
• Both inputs and outputs are directly TTL-compatible
• Outputs are three-state, with OR-tie capability
• Simple memory expansion by chip-select signal
• Data terminals are common for both inputs and outputs
