Each OPB828B device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor, mounted on opposite sides of a 0.125” (3.18 mm) wide slot in a black plastic housing.
Features
Voltage - Collector Emitter 30V
Voltage - Emitter Collector 5V
Forward DC Voltage 50mA
Pin 1 Red Anode
Pin 2 Black Cathode
Pin 3 White Collector
Pin 4 Green Emitter
Soldering: RMA flux is recommended.
WARNING
