RFP12N20 MOSFET N–Channel, High Speed Switch 12A 200V, TO-220AB
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Drain-source On Resistance-Max: 0.25 Ω
WARNING
