IRFF120 N-Channel MOSFET 100V, 6A TO-39
SPECIFICATIONS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 17(max) nC
Rise Time (tr): 70(max) nS
Drain-Source Capacitance (Cd): 150 pF
Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm
Package: TO-39
WARNING
