IRFZ20 Transistor Mosfet N-channel 17A, 60V, TO-220
Specifications:
Maximum Power Dissipation (Pd): 60 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 17 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 25(max) nC
Rise Time (tr): 58 nS
Drain-Source Capacitance (Cd): 360 pF
Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm
WARNING
