NTE222 FET Dual Gate N−Channel 30V MOSFET, TO72
SPECIFICATIONS:
Drain−Source Voltage, VDS: 25V
Drain−Gate Voltage, VDG : 30V Drain Current,
ID: 50mA Reverse Gate Current,
IG:−10mA Forward Gate Current,
IGF:10mA Total Device Dissipation (TA = +25 C),
PD: 360mW
Derate Above 25 C 2.4mW/ C
Total Device Dissipation (TC = +25 C), PD: 1.2mW
Derate Above 25 C 0.8mW/ C
Operating Junction Temperature Range, TJ: −65 to +175 C
WARNING
