General Purpose

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US$0.97

The BC546 is a BJT NPN transistor that works well with audio applications.

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US$0.97
Vceo: 30. Hfe @ Ic @ Vceo: 110 @ 2mA @ 5V. Icm: 100mA. 
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US$0.81
Transistor NPN 80V 1.5 Ampère, TO-126-3 COURANT COLLECTEUR: 1,5A TENSION CEB: 80V VCE Saturation: 500mv @ 50mA  CBO: 100nA DC Courant de gain: 40 @...
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US$0.81
BD319 Bipolar (BJT) Single Transistor, NPN, 80 V, 1.25 W, 1.5 A
Delivery within 2-3 weeks
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US$10.29
U235     Transistor, Matched Dual JFET N-Channel TO-71 Features Reverse Gate Source & Gate Drain Voltage: -50V Courant continu de porte: 50 Ma...
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US$1.39
Collector Base Voltage VCBO: 100 V. Collector Emitter Voltage VCEO: 80 V. Emitter Base Voltage VEBO: 5 V. Collector Current (DC) IC: 4 A. Collector Current (Peak) IC: 8 A. Collector power Dissipation: 40 W.
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US$1.11
Low Collector-Emitter Saturation Voltage. V CE (sat) = 1.0 V (Max) @ 8.0 A.
Delivery within 2-3 weeks
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US$1.18
Low Collector-Emitter Saturation Voltage. V CE (sat) = 1.0 V (Max) @ 8.0 A.
Delivery within 2-3 weeks
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US$3.00
FUNCTIONS: Vce (on) typ. = 2.15V, @Vge=15V).
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US$3.30
Transistor BJT NPN 115V 300mA 3W 1.2 Ghz TO-202
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US$0.49
1W NPN Bipolar Transistor Amplifier 80V 500mA TO-226
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US$0.29
1W PNP Bipolar Transistor Amplifier 80V 500mA TO-226
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US$0.49
1W NPN Bipolar Transistor Amplifier 300V 500mA TO-226
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US$5.17
Germanium PNP alloy-diffused transistor for use as an R.F amplifier in television tuners with forward gain control for frequencies up to 220 MHz. Gain H(fe): 10 min. Power dissipation: 156 mW. F(t) minimum: 150 MHZ.
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US$4.19
The AC188 is a silicon NPN transistor preferred for use in AF output applications. Uce: 15V. Ucb: 25V. HFE: 100min. 500max. N: 1 W. F: 1.5 mHz. T: 90°C.
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