NTE222 FET Dual Gate N−Channel 30V MOSFET, TO72

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US$18.15
NTE222
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NTE222 FET Dual Gate N−Channel 30V MOSFET, TO72

SPECIFICATIONS:
Drain−Source Voltage, VDS: 25V
Drain−Gate Voltage, VDG : 30V Drain Current,
ID: 50mA Reverse Gate Current,
IG:−10mA Forward Gate Current,
IGF:10mA Total Device Dissipation (TA = +25 C),
PD: 360mW
Derate Above 25 C 2.4mW/ C  
Total Device Dissipation (TC = +25 C), PD: 1.2mW
Derate Above 25 C 0.8mW/ C
Operating Junction Temperature Range, TJ: −65 to +175 C
 

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